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High materiality8/10

Navitas wins ALATTIS program, NVTS rallies on UHV SiC roadmap

Sep 28, 2026, 5:25 PM EDT1 sourcesAI-analyzed

Why it may matterVerify against the original reporting

Direct news of a government program win with a material share-price pop indicates embedded upside risk and potential long-term revenue opportunities, especially from defense contracts and U.S.-based manufacturing expansion.

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What happened, with direct paths to the underlying reporting

Navitas Semiconductor won the ALATTIS program to develop 10 kV silicon carbide power semiconductors, signaling a potential long-term boost to its defense-grade manufacturing footprint. The initiative targets a U.S.-based process for ultra-high-voltage SiC devices, which could attract defense contracts and support a multi-quarter upside as capacity and credibility build.

Navitas selected for ALATTIS to develop 10 kV SiC IGBTs; shares up 16% after-hours.
ALATTIS aims to validate a U.S.-based manufacturing process for ultra-high-voltage SiC devices.
Navitas emphasizes TAP architecture and PiN diodes for defense-grade reliability in UHV SiC.
Siddarth Sundaresan notes Navitas' leadership extending beyond SiC MOSFETs.

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