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Media Alert: Atomera Highlights MST® as a Toolbox for Engineering Silicon Virtual Substrates at 2025 CINT Annual User Meeting

1. Atomera presents research on Mears Silicon Technology at upcoming conference. 2. MST enhances silicon-based semiconductor performance for advanced applications. 3. Key topics include GaN-on-Si, piezoelectric, and spintronics technologies. 4. The conference aims to showcase capabilities of MST in semiconductor advancements. 5. Presentation scheduled for September 15 & 16, 2025 in Santa Fe.

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FAQ

Why Bullish?

The presentation could attract interest and investment, similar to past tech advancements.

How important is it?

The focus on groundbreaking MST technology may enhance Atomera's market position.

Why Long Term?

If MST is adopted widely, it may drive long-term revenue growth for Atomera.

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Atomera Incorporated (NASDAQ:ATOM):

WHO:

Marek Hytha, Atomera Chief Scientist — presenting research on MST; Dan Holladay, Director of Operations

 

WHAT:

In-person poster entitled "MST: A Toolbox for Engineering Silicon Virtual Substrates: From GaN-on-Si to Piezo-Si and Spintronics"

 

WHEN:

September 15 & 16, 2025

 

 

WHERE:

Santa Fe Convention Center

 

201 W. Marcy St.

 

Santa Fe, NM 87501

Marek Hytha, Atomera Chief Scientist, will present research on Mears Silicon Technology™ (MST®) — technology that enhances the performance of silicon-based semiconductor devices by inserting ultra-thin layers of oxygen into silicon wafers — as an atomic-scale substrate engineering platform enabling new frontiers in beyond-CMOS applications.

With adjustable layer count, spacing and composition, MST can be precisely engineered to enhance key semiconductor properties, including diffusion blocking, variability, mobility, gate leakage and reliability across GaN-on-Si, piezoelectric and spintronic applications. The poster will cover:

  • MST Substrate for GaN-on-Si Epitaxy
    • Building on its successful use in CMOS and RF-SOI devices, MST grown on Si (111) substrates is now being explored as a virtual substrate for GaN-on-Si Epitaxy to improve material quality and device performance, reduce leakage current and provide higher breakdown voltage for RF and power applications.
  • MST Piezoelectric Substrate
    • The oxygen atoms in MST form polar Si–O–Si dipoles. These dipoles, while randomly oriented in their as-grown state, can be aligned through applied electric fields and mechanical stress. This alignment induces net polarization, effectively generating a measurable piezoelectric effect in an otherwise non-piezoelectric silicon, opening pathways for integrating piezoelectric functions directly into standard silicon chips.
  • MST-Mn Diluted Magnetic Semiconductor Virtual Substrate for Spintronics
    • MST enables spintronic applications by supporting stable, room-temperature diluted magnetic semiconductors (DMS) in silicon. With uniform distribution of elements like manganese (Mn), MST is expected to provide efficient spin injection and carrier-mediated ferromagnetism, unlocking next-gen devices like MRAM and spin-LEDs for energy-efficient computing.

Follow Atomera:

Company website: https://atomera.com/

Atomera whitepaper: https://atomera.com/news-and-blogs/

Atomera blog: https://atomera.com/news-and-blogs/

LinkedIn: www.linkedin.com/company/atomera/

About Atomera

Atomera Incorporated, one of America's top 100 Best Small Companies in 2022 ranked by Forbes, is a semiconductor materials and technology licensing company focused on deploying its proprietary, silicon-proven technology into the semiconductor industry. Atomera has developed Mears Silicon Technology™ (MST®), which increases performance and power efficiency in semiconductor transistors. MST can be implemented using equipment already deployed in semiconductor manufacturing facilities and is complementary to other nano-scaling technologies in the semiconductor. More information can be found at www.atomera.com.

Press Contact:

Rachel Yang

The Hoffman Agency

t: (360) 910-5860

rachely@hoffman.com

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